PART |
Description |
Maker |
VN98AK VN35AK VN66AK VN67AK VN99AK |
HELD EFFECT POWER TRANSISTOR
|
New Jersey Semi-Conductor Products, Inc. New Jersey Semi-Conduct...
|
EM66932ABG-1H/LG |
4M x 32 Hand-Held Low Power SDRAM (LPSDRAM)
|
Etron Technology, Inc.
|
2SK700 |
N-channel MOS feild effect power transistor. N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR
|
NEC
|
S-AU50L |
UHF BAND FM POWER AMPLIFIER MODULE HAND-HELD TRANSCEIVER
|
Toshiba Semiconductor
|
IPA65R190CFD IPW65R190CFD IPI65R190CFD IPP64R190CF |
Metal Oxide Semiconduvtor Field Effect Transistor 650V CoolMOS C6 CFD POWER Transistor
|
Infineon Technologies AG Infineon Technologies A...
|
SSM3J02T |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
2SC2056 SC2056 |
NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers in VHF band portable or hand-held radio applications) From old datasheet system
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
PTF10020 |
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET 125 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor 125 Watts, 86060 MHz GOLDMOS Field Effect Transistor
|
ERICSSON POWER MODULES AB Ericsson Microelectronics
|
MRF21180R6 MRF21180 |
2170 MHz, 170 W, 28 V Lateral N-Channel RF Power MOSFET RF Power Field Effect Transistor
|
Freescale (Motorola) MOTOROLA[Motorola Inc] Motorola, Inc
|
MTP30N08M |
POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
CJU03N25 |
POWER FIELD EFFECT TRANSISTOR
|
List of Unclassifed Manufacturers ETC[ETC]
|